Strain induced suppression of silver agglomeration of indium-containing silver contact
SCIE
SCOPUS
- Title
- Strain induced suppression of silver agglomeration of indium-containing silver contact
- Authors
- Gwan Ho Jung; Son Jun Ho; Yang Hee Song; Lee, JL
- Date Issued
- 2010-05-17
- Publisher
- AMERICAN INSTITUTE OF PHYSICS
- Abstract
- The mechanism for thermally stable indium-containing silver [Ag(In)] Ohmic contact on p-type GaN has been investigated. The specific contact resistivity as low as 3.8x10(-5) Omega cm(2) and a high reflectance of 88.4% at a 460 nm wavelength were obtained by annealing Ag(0.5 wt % In) alloy contact at 450 degrees C in air ambient. The In atoms in Ag matrix made In-O chemical bonds, producing a tensile stress in the film. This compensated thermal compressive stress built in the Ag film. As a result, In atoms in Ag film play a role in preventing Ag contact from agglomeration, leading to high reflectance and good thermal stability. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3430509]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9706
- DOI
- 10.1063/1.3430509
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 96, no. 20, page. 201904, 2010-05-17
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