Low-Voltage and Short-Channel Pentacene Field-Effect Transistors with Top-Contact Geometry Using Parylene-C Shadow Masks

Abstract

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L=5, 10, and 20 mu m. The field-effect mobility of the transistors was mu=1.14 (+/- 0.08) cm(2)/V s on average, and the I-MAX/I-MIN ratio was greater than 10(6).