Vertically aligned Si intrananowire p-n diodes by large-area epitaxial growth
SCOPUS
- Title
- Vertically aligned Si intrananowire p-n diodes by large-area epitaxial growth
- Authors
- Kim, CJ; Lee, D; Lee, HS; Lee, G; Kim, GS; Jo, MH
- Date Issued
- 2009-04-27
- Publisher
- AMER INST PHYSICS
- Abstract
- We demonstrate fabrication of vertically aligned, intrananowire p-n diodes by large-area epitaxial growth of Si nanowires (NWs). The axially modulated doping profile of p-n junctions is achieved by in situ doping with alternating addition of dopants in the axial sequence during Au-assisted chemical vapor deposition. We provide direct evidence of the intra-NW p-n junctions using scanning local probes in both individual NWs and vertically aligned NWs at large areas. Our study suggests implication for integrated electronics and optoelectronics based on bottom-up Si NWs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9680
- DOI
- 10.1063/1.3126037
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 94, no. 17, 2009-04-27
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