Low-voltage organic transistors with titanium oxide/polystyrene bilayer dielectrics
SCIE
SCOPUS
- Title
- Low-voltage organic transistors with titanium oxide/polystyrene bilayer dielectrics
- Authors
- Lu, YX; Lee, WH; Lee, HS; Jang, Y; Cho, K
- Date Issued
- 2009-03-16
- Publisher
- AMER INST PHYSICS
- Abstract
- Pentacene-based low-voltage organic transistors were realized with titanium oxide/polystyrene (TiO(2)/PS) bilayer dielectrics. Significantly, the TiO(2) bottom layer was fabricated by a layer-by-layer deposition procedure and had an ultrathin thickness (< 5 nm). The nonpolar PS top layer not only shields out the high polarity TiO(2) layer, but also reduces the roughness of the dielectric, which results in low gate leakage of dielectric and the more ordered growth of pentacene film. This organic transistor with a TiO(2)/PS bilayer dielectric was found to exhibit high performance with a low operating voltage (<= 3 V), and a high on/off ratio (>10(7)).
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9678
- DOI
- 10.1063/1.3097010
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 94, no. 11, 2009-03-16
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