ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications
SCIE
SCOPUS
- Title
- ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications
- Authors
- Lee, CH; Yoo, J; Doh, YJ; Yi, GC
- Date Issued
- 2009-01-26
- Publisher
- AMER INST PHYSICS
- Abstract
- We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (similar to 110 cm(2)/V s), superior subthreshold swing (similar to 200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9659
- DOI
- 10.1063/1.3075606
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 94, no. 4, 2009-01-26
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.