Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor
SCIE
SCOPUS
- Title
- Novel Nonvolatile Memory with Multibit Storage Based on a ZnO Nanowire Transistor
- Authors
- CHOI, SU SEOK; Sohn, Jung Inn; Morris, Stephene. M; Bendall,James S; Coles, Harry. J.; Hong,Woong-Ki; Jo,Gunho; Lee,Takhee; Welland,Mark E.
- Date Issued
- 2010-11
- Publisher
- AMER CHEMICAL SOC
- Abstract
- We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW)
FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large
modulation in channel conductance between ON and OFF states exceeding 104, a long retention time of over 4 × 104 s, and multibit
memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible
with simple processing techniques at low temperature for flexible devices made on plastic substrates.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/96470
- DOI
- 10.1021/nl1013713
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- NANO LETTERS, vol. 10, no. 11, page. 4316 - 4320, 2010-11
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- There are no files associated with this item.
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