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CMOS compatible low-power volatile atomic switch for steep-slope FET devices SCIE SCOPUS

Title
CMOS compatible low-power volatile atomic switch for steep-slope FET devices
Authors
SEOKJAE, LIMYOO, JONGMYUNG송정환Woo, JiyongPARKJAEHYUKHwang, Hyunsang
Date Issued
2018-07
Publisher
AMER INST PHYSICS
Abstract
In this paper, we demonstrate a volatile atomic switch that can be utilized for obtaining steep subthreshold swing (SS) (<5 mV/dec) characteristics in FETs. We propose a CMOS-compatible atomic switch (W/Cu2S/W) that demonstrates volatility and immunity to the voltage-time dilemma. Furthermore, we enhance the device characteristics by examining the composition control, scaling of device size, and film thickness. Then, the atomic switch is integrated with a conventional transistor that has a large SS (>60 mV/dec). The result shows an improvement in the SS, which results from the transition of the atomic switch between the ON and OFF states, which is caused by the formation and rupture of a conductive filament. As a result, excellent switching characteristics are obtained for the FETs, such as low I-OFF (similar to 10(-5) mu A/mu m), high I-NO/I-OFF ratio (similar to 10(-5)), low V-DD (similar to 0.25 V), and steep SS (<5 mV/dec). Published by AIP Publishing.
URI
https://oasis.postech.ac.kr/handle/2014.oak/95841
DOI
10.1063/1.5039898
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 113, no. 3, 2018-07
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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