Role of Spin Hall Effect in the Topological Side Surface Conduction
SCIE
SCOPUS
- Title
- Role of Spin Hall Effect in the Topological Side Surface Conduction
- Authors
- Lee, Jekwan; Sim, Sangwan; Park, Soohyun; In, Chihun; Cho, Seungwan; Lee, Seungmin; Cha, Soonyoung; Lee, Sooun; HOIL, KIM; Kim, Jehyun; Shim, Wooyoung; Kim, Jun Sung; Kim, Dohun; Choi, Hyunyong
- Date Issued
- 2018-08
- Publisher
- AMER CHEMICAL SOC
- Abstract
- The nature of spin transport in the bulk and side surface of three-dimensional topological insulator thin film geometry is a relatively unexplored subject, compared to the extensively studied top and bottom surface states. Here we employ time-and space-resolved helicity-dependent photocurrent measurements to investigate the effect of optically excited bulk carriers on the spin-polarized topological side surface conduction. Time-resolved femtosecond double-pulse excitation reveals that the spin current toward the side surface arises from the bulk-originated spin Hall effect (SHE), whose microscopic origin is governed by an Elliott Yafet-type spin relaxation mechanism via an extrinsic side jump process. Bias-and temperature-dependent measurements further confirm that the spin scattering in Bi2Se3 has multiple sources including impurity and electron phonon scattering. The SHE-assisted side surface spin conduction shows an exceptionally high charge-to-spin conversion efficiency of 35% at 77 K, which may offer new spintronic applications of topological insulators such as spin orbit torque or spin-flip controlled light-emitting devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/95702
- DOI
- 10.1021/acsphotonics.8b00592
- ISSN
- 2330-4022
- Article Type
- Article
- Citation
- ACS PHOTONICS, vol. 5, no. 8, page. 3347 - 3352, 2018-08
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