Kinetic study of Al-mole fraction in AlxGa1-xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy
- Title
- Kinetic study of Al-mole fraction in AlxGa1-xN grown on c-plane sapphire and AlN bulk substrates by metal-organic vapor-phase epitaxy
- Authors
- Xi, YA; Chen, KX; Mont, FW; Kim, JK; Lee, W; Schubert, EF; Liu, W; Li, X; Smart, JA
- POSTECH Authors
- Kim, JK
- Date Issued
- Jan-2007
- Publisher
- AMER INST PHYSICS
- URI
- http://oasis.postech.ac.kr/handle/2014.oak/9562
- DOI
- 10.1063/1.2437681
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 90, no. 5, 2007-01
- Files in This Item:
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