Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics
SCIE
SCOPUS
- Title
- Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics
- Authors
- Yang, SY; Kim, SH; Shin, K; Jeon, H; Park, CE
- Date Issued
- 2006-04-24
- Publisher
- AMER INST PHYSICS
- Abstract
- Organic field-effect transistors (OFETs) for low-voltage operation have been realized with conventional polymer gate dielectrics such as polyimides and cross-linked poly-4-vinyl phenols (PVPs) by fabricating ultrathin films. These ultrathin polymers (thickness similar to 10 nm) have shown good insulating properties, including high breakdown fields (> 2.5 MV/cm). With ultrathin dielectrics, high capacitances (> 250 nF/cm(2)) have been achieved, allowing operation of OFETs within -3 V. Pentacene OFETs with ultrathin PVP dielectrics exhibit a mobility of 0.5 cm(2)/V s, an on-off ratio of 10(5), and a small subthreshold swing of 174 mV/decade when devices are operated at -3 V. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9539
- DOI
- 10.1063/1.2199592
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 88, no. 17, 2006-04-24
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.