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Low-voltage organic transistors on a polymer substrate with an aluminum foil gate fabricated by a laminating and electropolishing process SCIE SCOPUS

Title
Low-voltage organic transistors on a polymer substrate with an aluminum foil gate fabricated by a laminating and electropolishing process
Authors
Yang, CShin, KYang, SYJeon, HChoi, DChung, DSPark, CE
Date Issued
2006-10-09
Publisher
AMER INST PHYSICS
Abstract
The authors report flexible and low-voltage pentacene organic field-effect transistors (OFETs) constructed with an aluminum foil gate electrode, which was fabricated by the simple and low-cost roll-to-roll lamination process. Electropolishing the surface of laminated aluminum foil and spin coating it with an additional thin polymer film resulted in a gate dielectric surface with a root-mean-square roughness of about 0.85 nm. These pentacene OFETs with a poly(alpha-methylstyrene)/anodized Al2O3 dual-layered gate dielectric exhibit a mobility of 0.52 cm(2)/V s, an on-off ratio of 10(5), a subthreshold swing of 317 mV/decade, and little hysteresis when operating at -5 V. (c) 2006 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9521
DOI
10.1063/1.2361265
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 89, no. 15, 2006-10-09
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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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