Low-voltage organic transistors on a polymer substrate with an aluminum foil gate fabricated by a laminating and electropolishing process
SCIE
SCOPUS
- Title
- Low-voltage organic transistors on a polymer substrate with an aluminum foil gate fabricated by a laminating and electropolishing process
- Authors
- Yang, C; Shin, K; Yang, SY; Jeon, H; Choi, D; Chung, DS; Park, CE
- Date Issued
- 2006-10-09
- Publisher
- AMER INST PHYSICS
- Abstract
- The authors report flexible and low-voltage pentacene organic field-effect transistors (OFETs) constructed with an aluminum foil gate electrode, which was fabricated by the simple and low-cost roll-to-roll lamination process. Electropolishing the surface of laminated aluminum foil and spin coating it with an additional thin polymer film resulted in a gate dielectric surface with a root-mean-square roughness of about 0.85 nm. These pentacene OFETs with a poly(alpha-methylstyrene)/anodized Al2O3 dual-layered gate dielectric exhibit a mobility of 0.52 cm(2)/V s, an on-off ratio of 10(5), a subthreshold swing of 317 mV/decade, and little hysteresis when operating at -5 V. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9521
- DOI
- 10.1063/1.2361265
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 89, no. 15, 2006-10-09
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.