Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy
SCIE
SCOPUS
- Title
- Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy
- Authors
- Xi, YA; Chen, KX; Mont, F; Kim, JK; Wetzel, C; Schubert, EF; Liu, W; Li, X; Smart, JA
- Date Issued
- 2006-09-04
- Publisher
- AMER INST PHYSICS
- Abstract
- Very high quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor phase epitaxy is investigated by atomic force microscopy, x-ray diffraction, and photospectrometry. A clear and continuously linear step-flow pattern with sawtooth shaped terrace edges is observed in atomic force microscopic images. Triple-axis x-ray rocking curves show a full width at half maximum of 11.5 and 14.5 arc sec for the (002) and (004) reflections, respectively. KOH etching reveals an etch-pit density of 2x10(7) cm(-2), as deduced from atomic force microscopy measurements. The optical transmission spectrum shows a sharp absorption edge with a band gap energy of 6.10 eV. (c) 2006 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9506
- DOI
- 10.1063/1.2345256
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 89, no. 10, 2006-09-04
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