Isostructural metal-insulator transition in VO2
SCIE
SCOPUS
- Title
- Isostructural metal-insulator transition in VO2
- Authors
- LEE, DAESU; Chung, B.; Shi, Y.; Kim, G.-Y.; Campbell, N.; Xue, F.; Song, K.; CHOI, SI YOUNG; Podkaminer, J. P.; Kim, T. H.; Ryan, P. J.; Kim, J.-W.; Paudel, T. R.; KANG, JONG HOON; Spinuzzi, J. W.; Tenne, D. A.; Tsymbal, E. Y.; Rzchowski, M. S.; Chen, L. Q.; Lee, J.; Eom, C. B.
- Date Issued
- 2018-11
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Abstract
- The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/94933
- DOI
- 10.1126/science.aam9189
- ISSN
- 0036-8075
- Article Type
- Article
- Citation
- SCIENCE, vol. 362, no. 6418, page. 1037 - +, 2018-11
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.