Atomic-level strain-relieving mechanism and local electronic structure of a wetting film
SCIE
SCOPUS
- Title
- Atomic-level strain-relieving mechanism and local electronic structure of a wetting film
- Authors
- Kim, TH; Seo, J; Choi, BY; Song, YJ; Choi, J; Kuk, Y; Kahng, SJ
- Date Issued
- 2005-09-19
- Publisher
- American Institute of Physics
- Abstract
- The strain-relieving mechanism and local electronic density of states of a wetting film, was studied in the Ag/W system using scanning tunneling microscopy and spectroscopy. In the Ag wetting film, a periodic bright ridge structure was observed along the two equivalent directions, relieving mixed compressive-tensile strain. Two unoccupied electronic states were observed between the ridges, while the other two occupied electronic states were observed at the ridges. The Ag atoms occupying the bridge sites contribute to relieve the elastic strain and to induce the occupied electronic states. (c) 2005 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9482
- DOI
- 10.1063/1.2035325
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 87, no. 12, 2005-09-19
- Files in This Item:
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