Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN
SCIE
SCOPUS
- Title
- Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN
- Authors
- Baik, JM; Shon, Y; Kang, TW; Lee, JL
- Date Issued
- 2004-02-16
- Publisher
- AMER INST PHYSICS
- Abstract
- N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases. (C) 2004 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9479
- DOI
- 10.1063/1.1647282
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 84, no. 7, page. 1120 - 1122, 2004-02-16
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