Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures
SCIE
SCOPUS
- Title
- Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures
- Authors
- An, SJ; Park, WI; Yi, GC; Kim, YJ; Kang, HB; Kim, M
- Date Issued
- 2004-05-03
- Publisher
- AMER INST PHYSICS
- Abstract
- We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy. (C) 2004 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9474
- DOI
- 10.1063/1.1738180
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 84, no. 18, page. 3612 - 3614, 2004-05-03
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