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Preferential growth of boron layer in magnesium diboride (MgB2) by Mg diffusion method SCIE SCOPUS

Title
Preferential growth of boron layer in magnesium diboride (MgB2) by Mg diffusion method
Authors
HEO, YOON UKYoon, SangmoonKim, Jung HoKim, Young-KiKim, MiyoungSong, Tae-JinMaeda, MinoruDou, Shi-Xue
Date Issued
2017-11
Publisher
ELSEVIER SCIENCE SA
Abstract
Growth mechanism and grain boundary (GB) contact of polycrystalline MgB2 fabricated by Mg diffusion method are studied by STEM and EELS analyses. In contrast to the previous reports based on the computational calculation, preferential growth of (001) boron (B) layer and the B-B contact at MgB2 GBs are confirmed by annular dark field (ADF) -STEM image and the combined EELS analyses. The effect of BB contact at the GB on the superconductivity is further evaluated using First principles calculation. Superior GB linkage of the supercurrent flow via GB B-B contact is expected from the calculated density of states at Fermi level. B-terminated growth mechanism in Mg diffusion method and the effect of GB connectivity via B-B and Mg-Mg contacts are discussed. Finally, we suggest a model of GB linkage of supercurrent flow via B-B contact in polycrystalline MgB2. (C) 2017 Elsevier B.V. All rights reserved.
URI
https://oasis.postech.ac.kr/handle/2014.oak/94635
DOI
10.1016/j.jallcom.2017.07.186
ISSN
0925-8388
Article Type
Article
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, vol. 725, page. 526 - 535, 2017-11
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