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Band bending of LiF/Alq(3) interface in organic light-emitting diodes SCIE SCOPUS

Title
Band bending of LiF/Alq(3) interface in organic light-emitting diodes
Authors
Ihm, KKang, THKim, KJHwang, CCPark, YJLee, KBKim, BJeon, CHPark, CYKim, KTak, YH
Date Issued
2003-10-06
Publisher
AMER INST PHYSICS
Abstract
The insertion of LiF for an interlayer material between the Al cathode and tris-(8-hydroxyquinoline) aluminum (Alq(3)) in the organic light-emitting diodes (OLEDs) provides an improved device performance. The highly occupied molecular orbital (HOMO) level lowering in the Alq(3) layer induced by a low-coverage LiF deposition results in the reduction of electron injection barrier height. We investigated the electronic structure of the interface between the ultrathin LiF and the Alq(3) layer, using synchrotron x-ray photoelectron emission spectroscopy. The results revealed that the major origin of the HOMO level lowering is not the chemical bonding of dissociated fluorine in the Alq(3) layer but the band bending caused by charge redistribution driven by work function difference between LiF and Alq(3) layer. (C) 2003 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9441
DOI
10.1063/1.1616977
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 83, no. 14, page. 2949 - 2951, 2003-10-06
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이기봉LEE, KI BONG
Div. of Advanced Nuclear Enginrg
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