Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
SCIE
SCOPUS
- Title
- Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
- Authors
- Jang, HW; Lee, JH; Lee, JL
- Date Issued
- 2002-05-27
- Publisher
- AMER INST PHYSICS
- Abstract
- The change of band banding with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. Compared with a N-face sample, the Ga-face sample exhibited higher Schottky barrier height and lower contact resistivity of a Ti/Al-based Ohmic contact. It was found that Ga-face GaN has a larger surface band bending than N-face GaN by 1.4 eV due to spontaneous polarization, resulting in higher Schottky barrier height. The lower Ohmic contact resistivity on Ga-face GaN originated from the formation of polarization-induced two-dimensional electron gas at the interface of AlN with GaN. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9430
- DOI
- 10.1063/1.1481782
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 80, no. 21, page. 3955 - 3957, 2002-05-27
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