Impedance analysis of a radio-frequency single-electron transistor
SCIE
SCOPUS
- Title
- Impedance analysis of a radio-frequency single-electron transistor
- Authors
- Cheong, HD; Fujisawa, T; Hayashi, T; Hirayama, Y; Jeong, YH
- Date Issued
- 2002-10-21
- Publisher
- AMER INST PHYSICS
- Abstract
- We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf-SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior. (C) 2002 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9424
- DOI
- 10.1063/1.1515883
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 81, no. 17, page. 3257 - 3259, 2002-10-21
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