Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)
SCIE
SCOPUS
- Title
- Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001)
- Authors
- , Thushari Jayasekera; B. D. Kong; K. W. Kim; M. Buongiorno Nardelli
- Date Issued
- 2010-04-09
- Publisher
- AMER PHYSICAL SOC
- Abstract
- Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/94162
- DOI
- 10.1103/PhysRevLett.104.146801
- ISSN
- 0031-9007
- Article Type
- Article
- Citation
- PHYSICAL REVIEW LETTERS, vol. 104, no. 14, page. 146801, 2010-04-09
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.