Pressure sensitive contact transistors operating in subthreshold regime
- Title
- Pressure sensitive contact transistors operating in subthreshold regime
- Authors
- BAEK, SANGHOON; BAE, GEUNYOEL; KWON, JIMIN; CHO, KIL WON; JUNG, SUNGJUNE
- Date Issued
- 2018-10-12
- Publisher
- 한국고분자학회
- Abstract
- Low power consumption and high sensitivity are essentially required for large-area flexible electronic sensor arrays. In this work we introduce organic thin-film transistors whose source-drain contact varies with applied pressure, called contact transistors. A carbon nanotube-coated micro-structure rubbery polymer is patterned to use as deformable source/drain electrodes of a bottom-gate and top-contact transistor. Both the contact resistance and contact area between the electrodes and a semiconductor layer vary upon pressure applied, leading to the change in transistor’s drain current. A high sensitivity of 10.69 kPa-1, a low limit-of-detection pressure of 12 Pa and a fast response time of ~ 140 ms are successfully realized with the pressure sensitive contact transistors operating in unprecedented subthreshold regime at low gate voltage (~ 1 volt) and ultralow power (~ 10 nW). We finally demonstrate a 5 x 5 active matrix pressure sensor array based on the contact transistors with pixel per inch of 12.83.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/94007
- ISSN
- 2384-0307
- Article Type
- Conference
- Citation
- 2018 한국고분자학회 추계학술대회, 2018-10-12
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.