Open Access System for Information Sharing

Login Library

 

Article
Cited 23 time in webofscience Cited 23 time in scopus
Metadata Downloads

Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane SCIE SCOPUS

Title
Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane
Authors
Kim, BYLi, XDRhee, SW
Date Issued
1996-06-17
Publisher
AMER INST PHYSICS
Abstract
Deposition of aluminum film from DMEAA in the temperature range of 100-300 degrees C has been studied. In this temperature range, there is a maximum deposition rate at around 150 degrees C. The film deposited at 190 degrees C has elongated blocklike grain shapes, which are similar to 600 nm in width and 930 nm in length. Grains in the film deposited at 150 degrees C showed an equiaxed structure with grain size in the range of 100-300 nm in a film with 600 nm thickness, Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations. (C) 1996 American Institute of Physics.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9366
DOI
10.1063/1.116639
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 68, no. 25, page. 3567 - 3569, 1996-06-17
Files in This Item:

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Views & Downloads

Browse