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Atomic layer chemical vapor deposition (ALCVD) of Hafnium silicate high-k gate dielectric using a single precursor HfCl2[N{Si(CH3)3}2]2
- Title
- Atomic layer chemical vapor deposition (ALCVD) of Hafnium silicate high-k gate dielectric using a single precursor HfCl2[N{Si(CH3)3}2]2
- Authors
- 이시우
- Publisher
- Third Asian Chemical Vapor Deposition Conference
- Article Type
- Conference
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