Atomic layer chemical vapor deposition (ALCVD) of Hafnium silicate high-k gate dielectric for next generation nano devices
- Title
- Atomic layer chemical vapor deposition (ALCVD) of Hafnium silicate high-k gate dielectric for next generation nano devices
- Authors
- 이시우
- Publisher
- American Vacuum Society
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/91244
- Article Type
- Conference
- Citation
- AVS 5th International Conference on Atomic Layer Deposition
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- There are no files associated with this item.
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