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Simulation of Vertical Channel Nano-MOSFETs for Low Leakage DRAM Cell
- Title
- Simulation of Vertical Channel Nano-MOSFETs for Low Leakage DRAM Cell
- Authors
- 정윤하
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- 2006 IEEE Nanotechnology Materials and Devices Conference, page. 512 - 513
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg