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Electrical characteristics of Si-delta doped AlGaAs/InGaAs low noise P-HEMTs grown by LP-MOCVD
- Title
- Electrical characteristics of Si-delta doped AlGaAs/InGaAs low noise P-HEMTs grown by LP-MOCVD
- Authors
- 정윤하
- Date Issued
- 1994-11-19
- Publisher
- The Institute of Electronics Engineering of Korea
- Article Type
- Conference
- Citation
- Conference of KITE, Yeonse Univ., 1994-11-19
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg