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Characteristics of insulated gate inverted double channel pseudomorphic HEMT

Title
Characteristics of insulated gate inverted double channel pseudomorphic HEMT
Authors
정윤하
Date Issued
1994-02-21
Publisher
Korea Semiconductor Conference
URI
https://oasis.postech.ac.kr/handle/2014.oak/83193
Article Type
Conference
Citation
Proc. of 1st Korea Semiconductor Conference, page. 261 - 262, 1994-02-21
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정윤하JEONG, YOON HA
Dept of Electrical Enginrg
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