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Ultra-High Doping during Si(001) Gas-Source Molecular-Beam Epitaxy: Growth Kinetics, B-Incorporation, Strain, and Electrical Activation
- Title
- Ultra-High Doping during Si(001) Gas-Source Molecular-Beam Epitaxy: Growth Kinetics, B-Incorporation, Strain, and Electrical Activation
- Authors
- 김형준
- Date Issued
- 1997-10-01
- Publisher
- American Vacuum Society, 44th International Symposium
- Article Type
- Conference
- Citation
- American Vacuum Society, 1997-10-01
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Related Researcher
- 김형준KIM, HYUNGJUN
- Dept of Materials Science & Enginrg