Conference
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The fabrication of 0.25㎛ T-shaped gate AlGaAs/InGaAs P-HEMT and it's application to the input-matched 3 stage X-band LNA design
- Title
- The fabrication of 0.25㎛ T-shaped gate AlGaAs/InGaAs P-HEMT and it's application to the input-matched 3 stage X-band LNA design
- Authors
- 정윤하
- Date Issued
- 1997-11-22
- Publisher
- KITE
- Article Type
- Conference
- Citation
- Conference of KITE, page. 580 - 583, 1997-11-22
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Communities & Collection
Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg