The IMD sweet spots varied with gate bias voltages and input powers in RF LDMOS power amplifiers
- Title
- The IMD sweet spots varied with gate bias voltages and input powers in RF LDMOS power amplifiers
- Authors
- 정윤하
- Date Issued
- 2003-10-01
- Publisher
- European Microwave Conference
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/73868
- Article Type
- Conference
- Citation
- 33rd European Microwave Conference - Munich 2003, page. 1353 - 1356, 2003-10-01
- Files in This Item:
- There are no files associated with this item.
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