Electrical Properties of High k Gate Oxide Improved by Atomic Scale Nitrogen Depth Profiling
- Title
- Electrical Properties of High k Gate Oxide Improved by Atomic Scale Nitrogen Depth Profiling
- Authors
- 김형준
- Date Issued
- 2008-02-01
- Publisher
- The 15th Korean Conference on Semiconductors
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/72490
- Article Type
- Conference
- Citation
- The 15th Korean Conference on Semiconductors, 2008-02-01
- Files in This Item:
- There are no files associated with this item.
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