Effect of Rising Edge in Dynamic Stress with Various Duty Ratio in Amorphous Ingazno Thin Film Transistor
- Title
- Effect of Rising Edge in Dynamic Stress with Various Duty Ratio in Amorphous Ingazno Thin Film Transistor
- Authors
- 김오현; 이열형; 석수정
- Date Issued
- 2015-05-27
- Publisher
- Electro Chemical Society
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/71453
- Article Type
- Conference
- Citation
- The Electrochemical Society. 227th meeting, page. 1465 - 1465, 2015-05-27
- Files in This Item:
- There are no files associated with this item.
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