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Improved performance of In2Se3 nanowire device with thermal boundary resistance (TBR) for phase change memory application
- Title
- Improved performance of In2Se3 nanowire device with thermal boundary resistance (TBR) for phase change memory application
- Authors
- 이정수
- Date Issued
- 2013-02-04
- Publisher
- 한국반도체학술대회
- Article Type
- Conference
- Citation
- 제20회 한국반도체학술대회 (KCS 2013), 2013-02-04
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Related Researcher
- 이정수LEE, JEONG SOO
- Dept of Electrical Enginrg