Extension of the Transition Layer at the Vertical Interface of Si/SiO2 observed in Atom Probe Tomography
- Title
- Extension of the Transition Layer at the Vertical Interface of Si/SiO2 observed in Atom Probe Tomography
- Authors
- 박찬경; 이지현; 구길호
- Date Issued
- 2012-05-21
- Publisher
- IFES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/63486
- Article Type
- Conference
- Citation
- IFES 2012, 2012-05-21
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.