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Indium composition fluctuation in InGaN well layer of LED devices analyzed by

Title
Indium composition fluctuation in InGaN well layer of LED devices analyzed by
Authors
박찬경구길호이봉호
POSTECH Authors
박찬경
Date Issued
10-Jul-2011
Publisher
International Conference on Nitride Semiconductor
URI
http://oasis.postech.ac.kr/handle/2014.oak/60899
Article Type
Conference
Citation
9th International Conference on Nitride Semiconductor, 2011-07-10
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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