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Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs

Title
Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs
Authors
심재윤
Date Issued
2003-06-12
Publisher
IEEE
URI
https://oasis.postech.ac.kr/handle/2014.oak/56803
Article Type
Conference
Citation
Symposium on VLSI Circuits, page. 289 - 292, 2003-06-12
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심재윤SIM, JAE YOON
Dept of Electrical Enginrg
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