Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs
- Title
- Charge-transferred presensing and efficiently precharged negative word-line schemes for low-voltage DRAMs
- Authors
- 심재윤
- Date Issued
- 2003-06-12
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/56803
- Article Type
- Conference
- Citation
- Symposium on VLSI Circuits, page. 289 - 292, 2003-06-12
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.