Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM
SCIE
SCOPUS
- Title
- Effect of a Self-Limited Reset Operation on the Reset Breakdown Characteristics of a Monolithically Integrated 1T1R RRAM
- Authors
- Sung, Changhyuck; Song, Jeonghwan; Woo, Jiyong; Hwang, Hyunsang
- Date Issued
- 2017-06
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The reset breakdown of resistive random access memory (RRAM) significantly degrades device endurance. We suppressed reset breakdown by optimizing the reset operation in an HfO2-based 1T1R RRAM device. The effective gate-to-source voltage V-GS(eff) is reduced by increasing the RRAM resistance during the reset operation. By applying the optimum VGS, we can both guarantee a sufficient reset current and suppress reset breakdown. The experimental results confirmed improved endurance characteristics without a degraded resistance ratio. (C) 2017 The Electrochemical Society. All rights reserved.
- Keywords
- RESISTIVE-SWITCHING MEMORY; ENDURANCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50597
- DOI
- 10.1149/2.0281707jss
- ISSN
- 2162-8769
- Article Type
- Article
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 6, no. 7, page. 440 - 442, 2017-06
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