Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene-Bi2Se3 Heterostructure
SCIE
SCOPUS
- Title
- Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene-Bi2Se3 Heterostructure
- Authors
- Kim, J.; Park, S.; Jang, H.; Koirala, N.; Lee, J.-B.; Kim, U.J.; Lee, H.-S.; Roh, Y.-G.; Lee, H.; Sim, S.; Cha, S.; In, C.; Park, J.; Lee, J.; Noh, M.; Moon, J.; Salehi, M.; Sung, J.; Chee, S.-S.; Ham, M.-H.; Jo, M.-H.; Oh, S.; Ahn, J.-H.; Hwang, S.W.; Kim, D.; Choi, H.
- Date Issued
- 2017-02
- Publisher
- American Chemical Society
- Abstract
- Broadband detection of mid-infrared (IR) photons extends to advanced optoelectronic applications such as imaging, sensing, and telecommunications. While graphene offers an attractive platform for broadband visible/IR photodetection, previous efforts to improve its responsivity, for example, by integrating light-absorbing colloids or waveguide or antenna fabrication, were achieved at the cost of reduced photon detection bandwidth. In this work, we demonstrate room-temperature operation of a novel mid-IR photodetector based on a graphene-Bi2Se3 heterostructure showing broadband detection and high responsivity (1.97 and 8.18 A/W at mid- and near-IR, respectively), in which simultaneous improvement of the spectral range and responsivity is achieved via exploiting broadband absorption of mid-IR and IR photons in a small-band-gap Bi2Se3 topological insulator and efficient hot carrier separation and strong photogating across the Bi2Se3/graphene interface. With sufficient room for further improvement by interface engineering, our results show a promising route to realize ultrabroadband, high-responsivity hot-carrier optoelectronics at room temperature. ? 2017 American Chemical Society.
- Keywords
- Electric insulators; Energy gap; Graphene; Heterojunctions; High temperature engineering; Hot carriers; Infrared devices; Photons; Broadband absorption; Broadband detection; Interface engineering; Optoelectronic applications; Photo detection; photogating effect; Room-temperature operation; Topological insulators; Photodetectors
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50525
- DOI
- 10.1021/acsphotonics.6b00972
- ISSN
- 2330-4022
- Article Type
- Article
- Citation
- ACS Photonics, vol. 4, no. 3, page. 482 - 488, 2017-02
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