Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene
SCIE
SCOPUS
- Title
- Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene
- Authors
- Choi, Ji Eun; Yoo, Jinkyoung; LEE, DONGHWA; Fukui, Takashi; Hong, Young Joon; Fukui, Takashi
- Date Issued
- 2018-04
- Publisher
- AMER INST PHYSICS
- Abstract
- This study demonstrates the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. The WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds. Published by AIP Publishing.
- Keywords
- III-V NANOWIRES; SEMICONDUCTOR NANOWIRES; EPITAXIAL-GROWTH; LAYER GRAPHENE; GAAS NANOWIRES; ZINC-BLENDE; SUPERLATTICES; POLYTYPISM
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50103
- DOI
- 10.1063/1.5017251
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 112, no. 14, page. 142101, 2018-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.