Low‐Frequency Noise Analysis in HfO2HfO2/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness
- Title
- Low‐Frequency Noise Analysis in HfO2HfO2/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness
- Authors
- 백록현; 최도영; 정윤하
- Date Issued
- 2010-07-25
- Publisher
- AIP
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/49822
- Article Type
- Conference
- Citation
- ICPS 2010 (30th), 2010-07-25
- Files in This Item:
- There are no files associated with this item.
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