Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects
- Title
- Characterization of Gate-All-Around Si-NWFET, including Rsd, Cylindrical Coordinate Based 1/f Noise and Hot Carrier Effects
- Authors
- 이정수
- Date Issued
- 2010-05-06
- Publisher
- IEEE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/47645
- Article Type
- Conference
- Citation
- IEEE International Reliability Physics Symposium, 2010-05-06
- Files in This Item:
- There are no files associated with this item.
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