A nonvolatile Memory Device made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
- Title
- A nonvolatile Memory Device made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
- Authors
- 장현명; 손종역; 신영한; 유상우; 박윤철; 임윤탁
- Date Issued
- 2010-08-04
- Publisher
- Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/47465
- Article Type
- Conference
- Citation
- The 8th Japan-Korea Conference of ferroelectrics, 2010-08-04
- Files in This Item:
- There are no files associated with this item.
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