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Fabrication of In0.52Al0.48As/In0.53Ga0.47As Metamorphic GaAs HEMT with ft of 500 GHz at low temperature
- Title
- Fabrication of In0.52Al0.48As/In0.53Ga0.47As Metamorphic GaAs HEMT with ft of 500 GHz at low temperature
- Authors
- 정윤하
- Date Issued
- 2007-07-11
- Publisher
- IEEK
- Article Type
- Conference
- Citation
- 2007 IEEK Summer Conference, page. 853 - 854, 2007-07-11
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg