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Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs
- Title
- Comparison of PECVD and RTCVD CESL Nitride Stressor in Reliability and Performance Improvement for High-k/Metal Gate CMOSFETs
- Authors
- 정윤하
- Date Issued
- 2008-09-23
- Publisher
- Japanese Society of Applied Physics
- Article Type
- Conference
- Citation
- Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials (SSDM 2008), page. 362 - 363, 2008-09-23
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg