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High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability
- Title
- High Pressure Hydrogen Annealing Effect of CESL Nitride Stressor MOSFETs with Metal Gate/High-k Dielectric on the Performance and Reliability
- Authors
- 정윤하
- Date Issued
- 2009-06-02
- Publisher
- IEEE
- Article Type
- Conference
- Citation
- 2009 IEEE Nanotechnology Materials and Devices Conference, 2009-06-02
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg