The identification of 3-D In inclusion for the high-efficiency InGaN based multi quantum well light emitting diode by using atom probe tomography and HR-STEM
- Title
- The identification of 3-D In inclusion for the high-efficiency InGaN based multi quantum well light emitting diode by using atom probe tomography and HR-STEM
- Authors
- 박찬경; 구길호
- Date Issued
- 2009-04-23
- Publisher
- 대한재료금속학회
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/43929
- Article Type
- Conference
- Citation
- 대한재료금속학회 춘계학술대회, 2009-04-23
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.