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The identification of 3-D In inclusion for the high-efficiency InGaN based multi quantum well light emitting diode by using atom probe tomography and HR-STEM

Title
The identification of 3-D In inclusion for the high-efficiency InGaN based multi quantum well light emitting diode by using atom probe tomography and HR-STEM
Authors
박찬경구길호
Date Issued
2009-04-23
Publisher
대한재료금속학회
URI
https://oasis.postech.ac.kr/handle/2014.oak/43929
Article Type
Conference
Citation
대한재료금속학회 춘계학술대회, 2009-04-23
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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