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Article
A COMPARATIVE-STUDY OF THE KIRK EFFECT IN GAAS AND SI BIPOLAR JUNCTION TRANSISTORSSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 37, no. 8, page. 1485 - 1490, 1994-08

Article
Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junctionSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 18, no. 2, page. 60 - 62, 1997-02

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