Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction
SCIE
SCOPUS
- Title
- Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction
- Authors
- Shin, JH; Lee, JW; Chung, YJ; Ihn, BU; Kim, B
- Date Issued
- 1997-02
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- It is shown that the use of an electrically abrupt emitter-base junction considerably reduces the 1/f noise of self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT). Although this device does not have depleted AlGaAs ledge passivation layer, the low-frequency noise spectra show a very low 1/f noise corner frequency of less than 10 kHz, which is much lower than previously reported value of about 100 kHz from conventional passivated or unpassivated AlGaAs/GaAs HBT's. Except for a residual generation-recombination (g-r) noise component, the noise power is comparable to that of Si BJT, It is also found that the low-frequency noise power of the AlGaAs/GaAs HBT is proportional to the extrinsic GaAs base surface recombination current square, Unlike the other HBT's reported, the noise sources associated with interface state and emitter-base (E-B) space charge region recombination are not significant for our device.
- Keywords
- SURFACE PASSIVATION LAYER; CURRENT GAIN; GAAS; HBTS; TRANSPORT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21397
- DOI
- 10.1109/55.553044
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 18, no. 2, page. 60 - 62, 1997-02
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- There are no files associated with this item.
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