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Article
DC AND RF PERFORMANCE OF LP-MOCVD GROWN AL0.25GA0.75AS/INXGA1-XAS (X=0.15-0.28) P-HEMT WITH SI-DELTA DOPED GAAS LAYERSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 16, no. 12, page. 563 - 565, 1995-12

Article
EXPERIMENTAL INVESTIGATION OF LOW-FREQUENCY NOISE PROPERTIES OF ALGAAS/GAAS AND GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORSSCIE

INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 141, page. 625 - 628, 1995-01

Article
AlGaAs/GaAs SABM HBT의 제작 및 특성

전자공학회논문지 A, vol. 32, no. 1, page. 129 - 137, 1995-01

Article
LINEARITY CHARACTERISTICS OF THE LOW-HIGH DOPED MESFET FOR CDMA CELLULAR PHONE

ASIA PACIFIC MICROWAVE CONFERENCE. PROCEEDINGS, page. 117 - 119, 1995-01

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